The thickness and doping of base and collector regions determine the Collector-base breakdown voltage of the device and the collector-emitter breakdown voltage is determined by the collector-base breakdown and the current gain of the transistor. This leads to a very low collector-emitter voltage drop. Generally, a sufficient base current is fed into the device so that the device operates in the saturation mode with both the emitter-base and the base-collector junctions forward biased. In this mode, a reasonable current gain (which is defined as the ratio of the emitter current to the base current) is realized. In the ‘normal’ mode of operation, the emitter-base junction is forward biased and the collector-base junction is reverse biased. The bipolar transistor can be an n-p-n or p-n-p with a very highly doped emitter region, a thin middle base region and a step lightly doped - heavily doped collector region. The main current conduction through the emitter and the collector terminals is controlled through the base terminal.

39(2), 66–69 (2018).A power bipolar transistor is a three terminal device as shown in Fig. Li, L., Shaohua, D., Guoqing, L., et al.: Research and improvement of surface passivation process for high voltage IGBT Chip. In: 22nd International Conference on Electronic Packaging Technology (ICEPT), pp. IEC 619, Semiconductor devices –Part 9: Discrete devices –Insulated-gate bipolar transistors (IGBTs)Ĭhen, T., Zhou, L.: Research on failure mechanisms of localized IGBT drive board. Li, L., Jiang, L., Di, W., Yaouhua, W., Rui, J.: Research Progress of high voltage IGBT surface passivation process. Lutz, J., et al.: Semiconductor Power Devices: Physics, Characteristic, Reliability, 2nd edn. Sze, S.M., Ng, K.K.: Physics of Semiconductor Devices. (in Chinese)Įrping, D., Jingwei, Z., Yaosheng, L., et al.: Analysis of the reliability difference between IGBT modules and press-pack IGBTs. Qian, C., Wenhua, D., et al.: VDMOS high temperature reverse bias leakage current stability technology. Jiexin, L., Fashun, Y., Kui, M., Hong, G.: Research on the improving the function under high temperature and reverse bias of power switch transistor. 12(2), 24–35 (2018)įischer, K., Pelka, K., Bartschat, A., et al.: Reliability of power converters in wind turbines: exploratory analysis of failure and operating data from a worldwide turbine fleet. (in Chinese)įalck, J., Felgemacher, C., Rojko, A., et al.: Reliability of power electronic systems: an industry perspective.

Jun, Z., Guan Bo, D., Rui, X.D., Cheng, Q.: A thermal management control strategy for IGBT module in the wind power converter based on the distribution characteristics of consumed lifetime. Jun, Z., Li, Z., Cheng, Y.: Review of the lifetime evaluation for the IGBT module. Finally, the device is improved by passivation process and terminal structure optimization and tested under HTRB for 1000 h at 150 ℃.The test results show that HTRB reliability of the device is improved. The failure mechanisms of IGBT and diode chips are analyzed in detail, by sample preparation and scanning electron microscope (SEM) analyses, and the corresponding improvement measures are put forward. Then, the main failure modes on the device electrical performance and typical failure chip morphologies are summarized. Firstly, the terminal structure of IGBT is introduced. In order to improve high temperature reverse bias (HTRB) reliability performance of high voltage bond wired IGBT module, failure analysis is carried out aiming at failed 3300 V IGBT module after HTRB test in this paper. The requirement for domestic high voltage and large power insulated gate bipolar transistor (IGBT) is urgent, while the reliability of domestic IGBTs limit their application.

Collector emitter breakdown voltage